电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL50NH3LLMOSFET N-CH 30V 27A POWERFLAT STMicroelectronics |
1,441 | - |
|
数据手册 |
STripFET™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Tc) | 4.5V, 10V | 13mOhm @ 6.5A, 10V | 1V @ 250µA | 12 nC @ 4.5 V | ±16V | 965 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
|
STP110N8F6MOSFET N-CH 80V 110A TO220 STMicroelectronics |
695 | - |
|
数据手册 |
STripFET™ F6 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 150 nC @ 10 V | ±20V | 9130 pF @ 40 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
|
STP20NF06LMOSFET N-CH 60V 20A TO220AB STMicroelectronics |
145 | - |
|
数据手册 |
STripFET™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 5V, 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±18V | 400 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
STS9NF3LLMOSFET N-CH 30V 9A 8SO STMicroelectronics |
9,332 | - |
|
数据手册 |
STripFET™ II | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 19mOhm @ 4.5A, 10V | 1V @ 250µA | 17 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 2.5W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
STU4N80K5MOSFET N-CH 800V 3A IPAK STMicroelectronics |
2,983 | - |
|
数据手册 |
SuperMESH5™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
STFI10N62K3MOSFET N CH 620V 8.4A I2PAKFP STMicroelectronics |
1,495 | - |
|
数据手册 |
SuperMESH3™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 620 V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42 nC @ 10 V | ±30V | 1250 pF @ 50 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
|
STFH10N60M2MOSFET N-CH 600V 7.5A TO220FP STMicroelectronics |
1,660 | - |
|
数据手册 |
MDmesh™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Tc) | 10V | 600mOhm @ 9A, 10V | 4V @ 250µA | 13.5 nC @ 10 V | ±25V | 400 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FPAB |
|
STP30N10F7MOSFET N-CH 100V 32A TO220AB STMicroelectronics |
848 | - |
|
数据手册 |
STripFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 10V | 24mOhm @ 16A, 10V | 4.5V @ 250µA | 19 nC @ 10 V | ±20V | 1270 pF @ 50 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
STFI12N60M2MOSFET N-CH 600V 9A I2PAKFP STMicroelectronics |
1,487 | - |
|
数据手册 |
MDmesh™ M2 | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
|
|
STFI8N80K5MOSFET N-CH 800V 6A I2PAKFP STMicroelectronics |
1,486 | - |
|
数据手册 |
SuperMESH5™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
