场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ALD111933MAL

ALD111933MAL

MOSFET 2N-CH 10.6V 8MSOP

Advanced Linear Devices Inc.

6,379
ALD111933MAL

数据手册

EPAD® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-MSOP
ALD1115MAL

ALD1115MAL

MOSFET N/P-CH 10.6V 8MSOP

Advanced Linear Devices Inc.

7,620
ALD1115MAL

数据手册

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary - 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-MSOP
ALD1115SAL

ALD1115SAL

MOSFET N/P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,665
ALD1115SAL

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) N and P-Channel Complementary - 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110904SAL

ALD110904SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

8,722
ALD110904SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110800SCL

ALD110800SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

3,079
ALD110800SCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1108ESCL

ALD1108ESCL

MOSFET 4N-CH 10V 16SOIC

Advanced Linear Devices Inc.

5,204
ALD1108ESCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Not For New Designs MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 25pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD110908SAL

ALD110908SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

6,783
ALD110908SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110914SAL

ALD110914SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

8,303
ALD110914SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110808SCL

ALD110808SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

5,177
ALD110808SCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114935SAL

ALD114935SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

3,849
ALD114935SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
共 122 条记录«上一页12345678...13下一页»
Search

搜索

OEM STOCK

产品

OEM STOCK

电话

OEM STOCK

用户