场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ALD110900APAL

ALD110900APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

2,417
ALD110900APAL

数据手册

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1116SAL

ALD1116SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,416
ALD1116SAL

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110900SAL

ALD110900SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

9,418
ALD110900SAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1116PAL

ALD1116PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,888
ALD1116PAL

数据手册

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1117PAL

ALD1117PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

9,185
ALD1117PAL

数据手册

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102SAL

ALD1102SAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

1,691
ALD1102SAL

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD210800SCL

ALD210800SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

1,038
ALD210800SCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1102PAL

ALD1102PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

4,820
ALD1102PAL

数据手册

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110800ASCL

ALD110800ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

4,123
ALD110800ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1101ASAL

ALD1101ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,264
ALD1101ASAL

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
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