场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ALD1106SBL

ALD1106SBL

MOSFET 4N-CH 10.6V 14SOIC

Advanced Linear Devices Inc.

1,005
ALD1106SBL

数据手册

- 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
ALD1106PBL

ALD1106PBL

MOSFET 4N-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

492
ALD1106PBL

数据手册

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
ALD1117SAL

ALD1117SAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

195
ALD1117SAL

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD111933SAL

ALD111933SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

909
ALD111933SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1105PBL

ALD1105PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

269
ALD1105PBL

数据手册

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
ALD1107PBL

ALD1107PBL

MOSFET 4P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

223
ALD1107PBL

数据手册

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
ALD1115PAL

ALD1115PAL

MOSFET N/P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

3,158
ALD1115PAL

数据手册

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) N and P-Channel Complementary - 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1103PBL

ALD1103PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

1,150
ALD1103PBL

数据手册

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
ALD114904SAL

ALD114904SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

3,618
ALD114904SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD114913SAL

ALD114913SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

100
ALD114913SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
共 122 条记录«上一页1234...13下一页»
Search

搜索

OEM STOCK

产品

OEM STOCK

电话

OEM STOCK

用户