| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ALD310702ASCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
9,432 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
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ALD310704ASCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
2,227 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
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ALD310708ASCLMOSFET 4P-CH 8V 16SOIC Advanced Linear Devices Inc. |
4,838 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
ALD210808ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
7,513 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
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ALD212908ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc. |
5,049 |
|
数据手册 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD114835PCLMOSFET 4N-CH 10.6V 16PDIP Advanced Linear Devices Inc. |
2,382 |
|
数据手册 |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD110908APALMOSFET 2N-CH 10.6V 8PDIP Advanced Linear Devices Inc. |
7,794 |
|
数据手册 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD210808APCLMOSFET 4N-CH 10.6V 0.08A 16PDIP Advanced Linear Devices Inc. |
3,750 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
ALD212908APALMOSFET 2N-CH 10.6V 0.08A 8PDIP Advanced Linear Devices Inc. |
7,109 |
|
数据手册 |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD310704PCLMOSFET 4P-CH 8V 16PDIP Advanced Linear Devices Inc. |
3,728 |
|
数据手册 |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |