场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ALD212914SAL

ALD212914SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

3,956
ALD212914SAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Surface Mount 8-SOIC
ALD114804ASCL

ALD114804ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

7,166
ALD114804ASCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114904APAL

ALD114904APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

5,962
ALD114904APAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD114804PCL

ALD114804PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

6,312
ALD114804PCL

数据手册

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD114813PCL

ALD114813PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

3,675
ALD114813PCL

数据手册

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD310700PCL

ALD310700PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

5,440
ALD310700PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310702PCL

ALD310702PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

6,176
ALD310702PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD210800PCL

ALD210800PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

4,558
ALD210800PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD212914PAL

ALD212914PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

2,264
ALD212914PAL

数据手册

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Through Hole 8-PDIP
ALD310700ASCL

ALD310700ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

3,644
ALD310700ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
共 122 条记录«上一页1... 678910111213下一页»
Search

搜索

OEM STOCK

产品

OEM STOCK

电话

OEM STOCK

用户