场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTC60VDAM24T3G

APTC60VDAM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

3,376
APTC60VDAM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60BBM24T3G

APTC60BBM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

9,007
APTC60BBM24T3G

数据手册

CoolMOS™ SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - - SP3
APTC80A15SCTG

APTC80A15SCTG

MOSFET 2N-CH 800V 28A SP4

Microchip Technology

8,906
APTC80A15SCTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM120TDU57PG

APTM120TDU57PG

MOSFET 6N-CH 1200V 17A SP6-P

Microsemi Corporation

7,511
APTM120TDU57PG

数据手册

- SP6 Bulk Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 17A 684mOhm @ 8.5A, 10V 5V @ 2.5mA 187nC @ 10V 5155pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
VQ2001P-2

VQ2001P-2

MOSFET 4P-CH 30V 0.6A 14DIP

Vishay Siliconix

8,837
VQ2001P-2

数据手册

- 14-DIP Tube Obsolete MOSFET (Metal Oxide) 4 P-Channel - 30V 600mA 2Ohm @ 1A, 12V 4.5V @ 1mA - 150pF @ 15V 2W -55°C ~ 150°C (TJ) - - Through Hole 14-DIP
APTM50DHM35G

APTM50DHM35G

MOSFET 2N-CH 500V 99A SP6

Microsemi Corporation

3,650
APTM50DHM35G

数据手册

- SP6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTC80A10SCTG

APTC80A10SCTG

MOSFET 2N-CH 800V 42A SP4

Microchip Technology

5,743
APTC80A10SCTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 800V 42A 100mOhm @ 21A, 10V 3.9V @ 3mA 273nC @ 10V 6761pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
MSCC60VRM99CT3AG

MSCC60VRM99CT3AG

MOSFET 600V 19A SP3F

Microchip Technology

7,764
MSCC60VRM99CT3AG

数据手册

- Module Tube Active - - - 600V 19A (Tc) - - - - - - - - Chassis Mount SP3F
APTM20AM10FTG

APTM20AM10FTG

MOSFET 2N-CH 200V 175A SP4

Microchip Technology

3,590
APTM20AM10FTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 175A 12mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V 13700pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM20HM20FTG

APTM20HM20FTG

MOSFET 4N-CH 200V 89A SP4

Microchip Technology

8,659
APTM20HM20FTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 89A 24mOhm @ 44.5A, 10V 5V @ 2.5mA 112nC @ 10V 6850pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
UHB50SC12E1BC3N

UHB50SC12E1BC3N

MOSFET 2P-CH 1200V 69A MODULE

Qorvo

6,527
UHB50SC12E1BC3N

数据手册

- Module Bulk Active SiCFET (Silicon Carbide) 2 P-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 69A (Tj) 24mOhm @ 50A, 12V 6V @ 20mA 85nC @ 15V 2930pF @ 800V 208W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
UFB25SC12E1BC3N

UFB25SC12E1BC3N

MOSFET 4P-CH 1200V 36A MODULE

Qorvo

4,658
UFB25SC12E1BC3N

数据手册

- Module Bulk Active SiCFET (Silicon Carbide) 4 P-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 36A (Tj) 45mOhm @ 25A, 12V 6V @ 10mA 42.5nC @ 15V 1450pF @ 800V 114W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
APTM10HM09FT3G

APTM10HM09FT3G

MOSFET 4N-CH 100V 139A SP3

Microchip Technology

9,708
APTM10HM09FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM08TAM04PG

APTM08TAM04PG

MOSFET 6N-CH 75V 120A SP6-P

Microchip Technology

8,568
APTM08TAM04PG

数据手册

- SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 120A 4.5mOhm @ 60A, 10V 4V @ 1mA 153nC @ 10V 4530pF @ 25V 138W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM100H45FT3G

APTM100H45FT3G

MOSFET 4N-CH 1000V 18A SP3

Microchip Technology

3,715
APTM100H45FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 18A 540mOhm @ 9A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM70VM19C3AG

MSCSM70VM19C3AG

MOSFET 2N-CH 700V 124A SP3F

Microchip Technology

6,872
MSCSM70VM19C3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
A1F25M12W2-F1

A1F25M12W2-F1

MOSFET 4N-CH 1200V 50A ACEPACK1

STMicroelectronics

5,218
A1F25M12W2-F1

数据手册

- Module Tray Not For New Designs Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 50A 34mOhm @ 50A, 18V 4.9V @ 5mA 147nC @ 18V 3500pF @ 800V - 175°C (TJ) - - Chassis Mount ACEPACK 1
APTM50AM38FTG

APTM50AM38FTG

MOSFET 2N-CH 500V 90A SP4

Microchip Technology

3,471
APTM50AM38FTG

数据手册

POWER MOS 7® SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM50HM75FTG

APTM50HM75FTG

MOSFET 4N-CH 500V 46A SP4

Microchip Technology

7,703
APTM50HM75FTG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5600pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM20DUM08TG

APTM20DUM08TG

MOSFET 2N-CH 200V 208A SP4

Microchip Technology

2,101
APTM20DUM08TG

数据手册

- SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
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