场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
APTM10DSKM09T3G

APTM10DSKM09T3G

MOSFET 2N-CH 100V 139A SP3

Microchip Technology

5,304
APTM10DSKM09T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM100H46FT3G

APTM100H46FT3G

MOSFET 4N-CH 1000V 19A SP3

Microchip Technology

7,607
APTM100H46FT3G

数据手册

POWER MOS 8™ SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 19A 552mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 6800pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60HM70RT3G

APTC60HM70RT3G

MOSFET 4N-CH 600V 39A SP3

Microchip Technology

4,126
APTC60HM70RT3G

数据手册

CoolMOS™ SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) + Bridge Rectifier - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - - SP3
APTC60AM24T1G

APTC60AM24T1G

MOSFET 2N-CH 600V 95A SP1

Microchip Technology

3,810
APTC60AM24T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60HM45T1G

APTC60HM45T1G

MOSFET 4N-CH 600V 49A SP1

Microchip Technology

4,671
APTC60HM45T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

9,928
DF11MR12W1M1B11BOMA1

数据手册

- Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 50A 23mOhm @ 50A, 15V 5.5V @ 20mA 125nC @ 5V 3950pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
APTC60DDAM35T3G

APTC60DDAM35T3G

MOSFET 2N-CH 600V 72A SP3

Microchip Technology

9,626
APTC60DDAM35T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM10TDUM19PG

APTM10TDUM19PG

MOSFET 6N-CH 100V 70A SP6-P

Microsemi Corporation

8,348
APTM10TDUM19PG

数据手册

- SP6 Bulk Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM50DDAM65T3G

APTM50DDAM65T3G

MOSFET 2N-CH 500V 51A SP3

Microchip Technology

2,861
APTM50DDAM65T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V 7000pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM70AM19CT1AG

MSCSM70AM19CT1AG

MOSFET 2N-CH 700V 124A SP1F

Microchip Technology

3,260
MSCSM70AM19CT1AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
APTC60HM70BT3G

APTC60HM70BT3G

MOSFET 4N-CH 600V 39A SP3

Microchip Technology

5,717
APTC60HM70BT3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) Logic Level Gate 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 700pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
VQ1001P-2

VQ1001P-2

MOSFET 4N-CH 30V 0.83A 14DIP

Vishay Siliconix

8,809
VQ1001P-2

数据手册

- - Tube Obsolete MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 30V 830mA 1.75Ohm @ 200mA, 5V 2.5V @ 1mA - 110pF @ 15V 2W -55°C ~ 150°C (TJ) - - Through Hole 14-DIP
APTM50H10FT3G

APTM50H10FT3G

MOSFET 4N-CH 500V 37A SP3

Microchip Technology

8,892
APTM50H10FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 37A 120mOhm @ 18.5A, 10V 5V @ 1mA 96nC @ 10V 4367pF @ 25V 312W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
IXFN130N90SK

IXFN130N90SK

MOSFET 2N-CH 900V SOT227B

IXYS

8,035
IXFN130N90SK

数据手册

- SOT-227-4, miniBLOC Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V - - - - - - - - - Chassis Mount SOT-227B
VWM350-0075P

VWM350-0075P

MOSFET 6N-CH 75V 340A V2-PAK

IXYS

3,498
VWM350-0075P

数据手册

- V2-PAK Box Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 340A 3.3mOhm @ 250A, 10V 4V @ 2mA 450nC @ 10V - - -40°C ~ 175°C (TJ) - - Chassis Mount V2-PAK
APTC60DHM24T3G

APTC60DHM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

7,386
APTC60DHM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
UFB15C12E1BC3N

UFB15C12E1BC3N

MOSFET 4P-CH 1200V 24A MODULE

Qorvo

8,436
UFB15C12E1BC3N

数据手册

- Module Bulk Active SiCFET (Silicon Carbide) 4 P-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 24A (Tj) 90mOhm @ 15A, 12V 6V @ 10mA 46nC @ 15V 1445pF @ 800V 96W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
VQ1006P-2

VQ1006P-2

MOSFET 4N-CH 90V 0.4A 14DIP

Vishay Siliconix

2,022
VQ1006P-2

数据手册

- - Tube Obsolete MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 90V 400mA 4.5Ohm @ 1A, 10V 2.5V @ 1mA - 60pF @ 25V 2W -55°C ~ 150°C (TJ) - - Through Hole 14-DIP
APTM50HM75FT3G

APTM50HM75FT3G

MOSFET 4N-CH 500V 46A SP3

Microchip Technology

6,805
APTM50HM75FT3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5600pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTC60DDAM24T3G

APTC60DDAM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology

9,958
APTC60DDAM24T3G

数据手册

CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
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