场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NXV08B800DT1

NXV08B800DT1

MOSFET 80V APM17-MDC

onsemi

8,560
NXV08B800DT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.46mOhm @ 160A, 12V 4.6V @ 1mA 502nC @ 12V 30150pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
APTM10DHM09T3G

APTM10DHM09T3G

MOSFET 2N-CH 100V 139A SP3

Microsemi Corporation

7,282
APTM10DHM09T3G

数据手册

POWER MOS V® SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTML202UM18R010T3AG

APTML202UM18R010T3AG

MOSFET 2N-CH 200V 109A SP3

Microsemi Corporation

8,730
APTML202UM18R010T3AG

数据手册

- SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 109A (Tc) 19mOhm @ 50A, 10V 4V @ 2.5mA - 9880pF @ 25V 480W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
NXV08H350XT1

NXV08H350XT1

MOSFET 80V APM17-MDC

onsemi

3,804
NXV08H350XT1

数据手册

- 17-PowerDIP Module (1.390", 35.30mm) Bulk Active MOSFET (Metal Oxide) - - 80V - 0.762mOhm @ 160A, 12V 4.6V @ 1mA 320nC @ 10V 24350pF @ 40V - -40°C ~ 125°C (TA) Automotive AEC-Q101 Through Hole APM17-MDC
APTML102UM09R004T3AG

APTML102UM09R004T3AG

MOSFET 2N-CH 100V 154A SP3

Microsemi Corporation

6,832
APTML102UM09R004T3AG

数据手册

- SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 154A (Tc) 10mOhm @ 69.5A, 10V 4V @ 2.5mA - 9875pF @ 25V 480W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
2N7334

2N7334

MOSFET 4N-CH 100V 1A MO-036AB

Microsemi Corporation

4,748
2N7334

数据手册

- 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel - 100V 1A 700mOhm @ 600mA, 10V 4V @ 250µA 60nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Through Hole MO-036AB
F445MR12W1M1B76BPSA1

F445MR12W1M1B76BPSA1

MOSFET 4N-CH 1200V 25A AG-EASY1B

Infineon Technologies

9,244
F445MR12W1M1B76BPSA1

数据手册

EasyPACK™ CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
VBH40-05B

VBH40-05B

MOSFET 4N-CH 500V 40A V2-PAK

IXYS

5,975
VBH40-05B

数据手册

HiPerFET™ V2-PAK Box Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 40A 116mOhm @ 30A, 10V 4V @ 8mA 270nC @ 10V - - -40°C ~ 150°C (TJ) - - Chassis Mount V2-PAK
APTC60DDAM70T1G

APTC60DDAM70T1G

MOSFET 2N-CH 600V 39A SP1

Microchip Technology

8,144
APTC60DDAM70T1G

数据手册

CoolMOS™ SP1 Tray Active MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC80H29T3G

APTC80H29T3G

MOSFET 4N-CH 800V 15A SP3

Microchip Technology

4,794
APTC80H29T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 800V 15A 290mOhm @ 7.5A, 10V 3.9V @ 1mA 90nC @ 10V 2254pF @ 25V 156W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM50AM70FT1G

APTM50AM70FT1G

MOSFET 2N-CH 500V 50A SP1

Microsemi Corporation

5,540
APTM50AM70FT1G

数据手册

- SP1 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 50A 84mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 10800pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM10DSKM19T3G

APTM10DSKM19T3G

MOSFET 2N-CH 100V 70A SP3

Microchip Technology

3,320
APTM10DSKM19T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
VQ1006P

VQ1006P

MOSFET 4N-CH 90V 0.4A 14DIP

Vishay Siliconix

5,977
VQ1006P

数据手册

- - Tube Obsolete MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 90V 400mA 4.5Ohm @ 1A, 10V 2.5V @ 1mA - 60pF @ 25V 2W -55°C ~ 150°C (TJ) - - Through Hole 14-DIP
VQ1006P-E3

VQ1006P-E3

MOSFET 4N-CH 90V 0.4A 14DIP

Vishay Siliconix

9,929
VQ1006P-E3

数据手册

- - Tube Obsolete MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 90V 400mA 4.5Ohm @ 1A, 10V 2.5V @ 1mA - 60pF @ 25V 2W -55°C ~ 150°C (TJ) - - Through Hole 14-DIP
APTM50H15FT1G

APTM50H15FT1G

MOSFET 4N-CH 500V 25A SP1

Microchip Technology

5,712
APTM50H15FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 25A 180mOhm @ 21A, 10V 5V @ 1mA 170nC @ 10V 5448pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM60A11FT1G

APTM60A11FT1G

MOSFET 2N-CH 600V 40A SP1

Microchip Technology

4,773
APTM60A11FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 40A 132mOhm @ 33A, 10V 5V @ 2.5mA 330nC @ 10V 10552pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC60AM45T1G

APTC60AM45T1G

MOSFET 2N-CH 600V 49A SP1

Microchip Technology

4,729
APTC60AM45T1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTM60H23FT1G

APTM60H23FT1G

MOSFET 4N-CH 600V 20A SP1

Microchip Technology

7,326
APTM60H23FT1G

数据手册

- SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 20A 276mOhm @ 17A, 10V 5V @ 1mA 165nC @ 10V 5316pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
APTC80DDA15T3G

APTC80DDA15T3G

MOSFET 2N-CH 800V 28A SP3

Microchip Technology

4,445
APTC80DDA15T3G

数据手册

- SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
APTM120A80FT1G

APTM120A80FT1G

MOSFET 2N-CH 1200V 14A SP1

Microsemi Corporation

6,247
APTM120A80FT1G

数据手册

- SP1 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 14A 960mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V 6696pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
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