| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5400BULKDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
4,000 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 50 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5407BULKDIODE GEN PURP 800V 3A DO201AD EIC SEMICONDUCTOR INC. |
4,000 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 800 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
RM11A-BULKDIODE GEN PURP 600V 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
数据手册 |
- | D-2, Axial | Bag | Active | Standard | 600 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
RM11B-BULKDIODE GEN PURP 800V 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
数据手册 |
- | D-2, Axial | Bag | Active | Standard | 800 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
1N4005BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
7,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
HER306T/RDIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 |
|
数据手册 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
HER305T/RDIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 |
|
数据手册 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
RM11C-BULKDIODE GEN PURP 1KV 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
数据手册 |
- | D-2, Axial | Bag | Active | Standard | 1000 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
FR101BULKDIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC. |
39,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 50 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
FR102BULKDIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC. |
38,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 100 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |