| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5396BULKDIODE GEN PURP 500V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 500 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 500 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5394BULKDIODE GEN PURP 300V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 300 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 300 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5397BULKDIODE GEN PURP 600V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 A @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5392BULKDIODE GEN PURP 100V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 100 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N4007BULKDIODE GEN PURP 1KV 1A DO41 EIC SEMICONDUCTOR INC. |
17,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5405BULKDIODE GEN PURP 500V 3A DO201AD EIC SEMICONDUCTOR INC. |
15,000 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 500 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 500 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5401BULKDIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC. |
14,647 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 100 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5403BULKDIODE GEN PURP 300V 3A DO201AD EIC SEMICONDUCTOR INC. |
13,500 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 300 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 300 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5395BULKDIODE GEN PURP 400V 1.5A DO41 EIC SEMICONDUCTOR INC. |
10,000 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 400 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5402BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
6,750 |
|
数据手册 |
- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |