| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1SS196(TE85L,F)DIODE GEN PURP 80V 100MA SC59-3 Toshiba Semiconductor and Storage |
2,287 |
|
数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 3pF @ 0V, 1MHz | - | - | Surface Mount | SC-59-3 | 125°C (Max) |
|
1SS397TE85LFDIODE GEN PURP 400V 100MA SC70 Toshiba Semiconductor and Storage |
6,818 |
|
数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | Standard | 400 V | 100mA | 1.3 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 500 ns | 1 µA @ 400 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | SC-70 | 125°C (Max) |
|
CMF04(TE12L,Q,M)DIODE GEN PURP 800V 500MA M-FLAT Toshiba Semiconductor and Storage |
7,611 |
|
数据手册 |
- | SOD-128 | Tape & Reel (TR) | Active | Standard | 800 V | 500mA | 2.5 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 800 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
TRS3E65F,S1QDIODE SIL CARB 650V 3A TO220-2L Toshiba Semiconductor and Storage |
9,681 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.6 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 12pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS4E65F,S1QDIODE SIL CARB 650V 4A TO220-2L Toshiba Semiconductor and Storage |
9,142 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 16pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS8E65F,S1QDIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage |
8,401 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 28pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS10E65F,S1QDIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage |
3,742 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS10A65F,S1QDIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage |
4,007 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
TRS4A65F,S1QDIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage |
4,029 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 16pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
TRS12E65F,S1QDIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage |
5,715 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 65pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |