| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TRS4E65H,S1QG3 SIC-SBD 650V 4A TO-220-2L Toshiba Semiconductor and Storage |
341 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
TRS6V65H,LQG3 SIC-SBD 650V 6A DFN8X8 Toshiba Semiconductor and Storage |
4,803 |
|
数据手册 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
TRS6E65H,S1QG3 SIC-SBD 650V 6A TO-220-2L Toshiba Semiconductor and Storage |
194 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
TRS8E65H,S1QG3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage |
338 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
TRS10V65H,LQG3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage |
3,975 |
|
数据手册 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 Toshiba Semiconductor and Storage |
4,472 |
|
数据手册 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L Toshiba Semiconductor and Storage |
370 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
CBS10S40,L3FDIODE SCHOTTKY 40V 1A CST2B Toshiba Semiconductor and Storage |
8,993 |
|
数据手册 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 40 V | 120pF @ 0V, 1MHz | - | - | Surface Mount | CST2B | 125°C (Max) |
|
CBS10S30,L3FDIODE SCHOTTKY 20V 1A CST2B Toshiba Semiconductor and Storage |
6,608 |
|
数据手册 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Obsolete | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 135pF @ 0V, 1MHz | - | - | Surface Mount | CST2B | 125°C (Max) |
|
CCS15S30,L3FDIODE SCHOTTKY 20V 1.5A CST2C Toshiba Semiconductor and Storage |
29,761 |
|
数据手册 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 20 V | 1.5A | 400 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 200pF @ 0V, 1MHz | - | - | Surface Mount | CST2C | 125°C (Max) |