| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR106G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
7,995 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
FR107G B0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
9,206 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
FR156GHB0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
4,048 |
|
数据手册 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 800 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
FR157G B0GDIODE GEN PURP 1.5A DO204AC Taiwan Semiconductor Corporation |
6,620 |
|
数据手册 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 1000 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
FR205G B0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,956 |
|
数据手册 |
- | DO-204AC, DO-15, Axial | Bulk | Active | Standard | 600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
FR207G B0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
8,920 |
|
数据手册 |
- | DO-204AC, DO-15, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
FR305G B0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
9,734 |
|
数据手册 |
- | DO-201AD, Axial | Bulk | Active | Standard | 600 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 30pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
FR306G B0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,911 |
|
数据手册 |
- | DO-201AD, Axial | Bulk | Active | Standard | 800 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 30pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
FR307G B0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
4,353 |
|
数据手册 |
- | DO-201AD, Axial | Bulk | Active | Standard | 1000 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
HER107G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
8,034 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |