| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6A60GHB0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
3,662 |
|
数据手册 |
- | R-6, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
|
6A80G B0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
5,905 |
|
数据手册 |
- | R-6, Axial | Bulk | Active | Standard | 800 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
6A80GHB0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
8,538 |
|
数据手册 |
- | R-6, Axial | Bulk | Active | Standard | 800 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
|
BA157G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
6,978 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
BA157GHB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
7,275 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 400 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
BA158G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
5,440 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
BA158GHB0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,375 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
BA159G B0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
6,555 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
BA159GHB0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
4,651 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
FR104G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
9,589 |
|
数据手册 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |