| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
HS1AL MTGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
8,278 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1DL MQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
4,768 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1DL RQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
5,005 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1DL RTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
8,722 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1FL MQGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
2,594 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 300 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
HS1FL RQGDIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation |
8,804 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 300 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 20pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RS1ALHMQGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,239 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 50 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RS1ALHMTGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
6,785 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 50 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RS1BL RTGDIODE GP 100V 800MA SUB SMA Taiwan Semiconductor Corporation |
9,209 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 100 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
RS1GL RTGDIODE GP 400V 800MA SUB SMA Taiwan Semiconductor Corporation |
7,690 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 400 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 10pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |