| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
ES1BL RTGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
7,185 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1DL MQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
8,328 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1DL RQGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
2,085 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1DL RTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
7,440 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1DLHRTGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
4,946 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1GL RTGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
8,412 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 8pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1GLHMQGDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
9,222 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 8pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1JL RQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,873 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 8pF @ 1V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1JLHRQGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
8,698 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 8pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |
|
|
ES1JLHRTGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
8,875 |
|
数据手册 |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 8pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | Sub SMA | -55°C ~ 150°C |