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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STB10N65K3MOSFET N-CH 650V 10A D2PAK STMicroelectronics |
901 | - |
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数据手册 |
SuperMESH3™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 1Ohm @ 3.6A, 10V | 4.5V @ 100µA | 42 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STB150N3LH6MOSFET N CH 30V 80A D2PAK STMicroelectronics |
998 | - |
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数据手册 |
DeepGATE™, STripFET™ VI | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 5V, 10V | 3mOhm @ 40A, 10V | 2.5V @ 250µA | 80 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STL12N65M5MOSFET N-CH 650V 8.5A POWERFLAT STMicroelectronics |
1,863 | - |
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数据手册 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.5A (Tc) | 10V | 530mOhm @ 4.25A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±25V | 644 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
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STF2LN60K3MOSFET N CH 600V 2A TO-220FP STMicroelectronics |
895 | - |
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数据手册 |
SuperMESH3™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.5Ohm @ 1A, 10V | 4.5V @ 50µA | 12 nC @ 10 V | ±30V | 235 pF @ 50 V | - | 20W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STU6N65M2MOSFET N-CH 650V 4A IPAK STMicroelectronics |
523 | - |
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数据手册 |
MDmesh™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4V @ 250µA | 9.8 nC @ 10 V | ±25V | 226 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STP10P6F6MOSFET P-CH 60V 10A TO220 STMicroelectronics |
442 | - |
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数据手册 |
DeepGATE™, STripFET™ VI | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 160mOhm @ 5A, 10V | 4V @ 250µA | 6.4 nC @ 10 V | ±20V | 340 pF @ 48 V | - | 30W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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STU5N60M2MOSFET N-CH 600V 3.7A IPAK STMicroelectronics |
831 | - |
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数据手册 |
MDmesh™ II Plus | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5 nC @ 10 V | ±25V | 165 pF @ 100 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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STF7N52DK3MOSFET N-CH 525V 6A TO220FP STMicroelectronics |
947 | - |
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数据手册 |
SuperFREDmesh3™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 525 V | 6A (Tc) | 10V | 1.15Ohm @ 3A, 10V | 4.5V @ 50µA | 33 nC @ 10 V | ±30V | 870 pF @ 50 V | - | 25W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STF11N50M2MOSFET N-CH 500V 8A TO220FP STMicroelectronics |
189 | - |
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数据手册 |
MDmesh™ II Plus | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±25V | 395 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP7N65M2MOSFET N-CH 650V 5A TO220 STMicroelectronics |
465 | - |
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数据手册 |
MDmesh™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 1.15Ohm @ 2.5A, 10V | 4V @ 250µA | 9 nC @ 10 V | ±25V | 270 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
