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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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STL7N60M2MOSFET N-CH 600V 5A POWERFLAT STMicroelectronics |
2,900 | - |
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数据手册 |
MDmesh™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.05Ohm @ 2A, 10V | 4V @ 250µA | 8.8 nC @ 10 V | ±25V | 271 pF @ 100 V | - | 4W (Ta), 67W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFLAT™ (5x5) |
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STD12N60M2MOSFET N-CHANNEL 600V 9A DPAK STMicroelectronics |
7,451 | - |
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数据手册 |
MDmesh™ M2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | - | 85W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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STD1HN60K3MOSFET N-CH 600V 1.2A DPAK STMicroelectronics |
1,500 | - |
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数据手册 |
SuperMESH3™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.2A (Tc) | 10V | 8Ohm @ 600mA, 10V | 4.5V @ 50µA | 9.5 nC @ 10 V | ±30V | 140 pF @ 50 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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STP2N95K5MOSFET N-CH 950V 2A TO220 STMicroelectronics |
970 | - |
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数据手册 |
SuperMESH5™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10 nC @ 10 V | 30V | 105 pF @ 100 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STL10N65M2MOSFET N-CH 650V 4.5A POWERFLAT STMicroelectronics |
2,983 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 10.3 nC @ 10 V | ±25V | 315 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) HV |
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STD5NK40Z-1MOSFET N-CH 400V 3A IPAK STMicroelectronics |
2,916 | - |
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数据手册 |
SuperMESH™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3A (Tc) | 10V | 1.8Ohm @ 1.5A, 10V | 4.5V @ 50µA | 17 nC @ 10 V | ±30V | 305 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STU8N80K5MOSFET N-CH 800V 6A TO251 STMicroelectronics |
1,957 | - |
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数据手册 |
SuperMESH5™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 5V @ 100µA | 16.5 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STD4LN80K5MOSFET N-CHANNEL 800V 3A DPAK STMicroelectronics |
2,420 | - |
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数据手册 |
MDmesh™ K5 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7 nC @ 10 V | ±30V | 122 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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STD4NK60ZT4MOSFET N-CH 600V 4A DPAK STMicroelectronics |
2,204 | - |
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数据手册 |
SuperMESH™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 70W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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STP4LN80K5MOSFET N-CHANNEL 800V 3A TO220 STMicroelectronics |
978 | - |
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数据手册 |
MDmesh™ K5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7 nC @ 10 V | ±30V | 122 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
