电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STP80N600K6N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics |
3,420 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 100µA | 10.7 nC @ 10 V | ±30V | 540 pF @ 400 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STO24N60M6DISCRETE STMicroelectronics |
5,440 | - |
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数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
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SGT120R65AL650 V, 75 MOHM TYP., 15 A, E-MOD STMicroelectronics |
6,377 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | 6V | 120mOhm @ 5A, 6V | 2.6V @ 12mA | 3 nC @ 6 V | +6V, -10V | 125 pF @ 400 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) HV |
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SCT070H120G3-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
6,906 | - |
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数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STW70N65DM6-4MOSFET N-CH 650V 68A TO247-4 STMicroelectronics |
7,461 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4.75V @ 250µA | 125 nC @ 10 V | ±25V | 4900 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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SCT040W65G3-4SILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
2,863 | - |
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数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STWA65N045M9N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics |
4,116 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | 4.2V @ 250µA | 80 nC @ 10 V | ±30V | 4610 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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SCT070W120G3-4AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
9,992 | - |
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数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT070H120G3AGH2PAK-7 STMicroelectronics |
9,135 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | 4.2V @ 1mA | 37 nC @ 18 V | +18V, -5V | 900 pF @ 850 V | - | 223W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCT070W120G3-4AGTO247-4 STMicroelectronics |
4,612 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | 4.2V @ 1mA | 41 nC @ 18 V | +18V, -5V | 900 pF @ 850 V | - | 236W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
