电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SCTH40N120G2V7AGSICFET N-CH 1200V 33A H2PAK-7 STMicroelectronics |
5,870 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCTW90N65G2VSICFET N-CH 650V 90A HIP247 STMicroelectronics |
3,679 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | 5V @ 250µA | 157 nC @ 18 V | +22V, -10V | 3300 pF @ 400 V | - | 390W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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SCTWA90N65G2V-4TRANS SJT N-CH 650V 119A HIP247 STMicroelectronics |
3,043 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | - | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
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STY105NM50NMOSFET N-CH 500V 110A MAX247 STMicroelectronics |
8,569 | - |
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数据手册 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 110A (Tc) | 10V | 22mOhm @ 52A, 10V | 4V @ 250µA | 326 nC @ 10 V | ±25V | 9600 pF @ 100 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
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STE88N65M5MOSFET N-CH 650V 88A ISOTOP STMicroelectronics |
9,233 | - |
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数据手册 |
MDmesh™ V | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 88A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 494W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP |
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STE40NC60MOSFET N-CH 600V 40A ISOTOP STMicroelectronics |
4,267 | - |
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数据手册 |
PowerMESH™ II | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 130mOhm @ 20A, 10V | 4V @ 250µA | 430 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 460W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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STB76NF75MOSFET N-CH 75V 80A D2PAK STMicroelectronics |
7,848 | - |
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数据手册 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STF80N1K1K6N-CHANNEL 800 V, 1.0 OHM TYP., 5 STMicroelectronics |
7,644 | - |
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数据手册 |
ECOPACK® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 1.1Ohm @ 1.7A, 10V | 4V @ 50µA | 5.7 nC @ 10 V | ±30V | 300 pF @ 400 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STL300N4F8N-CHANNEL ENHANCEMENT MODE 40V, STMicroelectronics |
4,676 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STL300N4LF8POWER FLAT 8L 6X5X1 P1.27 STMicroelectronics |
8,612 | - |
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数据手册 |
STripFET™ F8 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1mOhm @ 60A, 10V | 2V @ 250µA | 70 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
