| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UF4SC120023B7S1200V/23MO,SICFET,G4,TO263-7 Qorvo |
6,159 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 12V | 30mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UJ4SC075010L8S750V/10MO,SICFET,G4,TOLL Qorvo |
3,583 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ4C075023L8SSB750V/23MO,SICFET,G4,TOLL Qorvo |
3,782 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ4SC075010L8SSR750V/10MO,SICFET,G4,TOLL Qorvo |
6,475 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UF4C120053B7SSB1200V/53MO,SICFET,G4,TO263-7 Qorvo |
3,156 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tj) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UF4SC120030B7SSB1200V/30MO,SICFET,G4,TO263-7 Qorvo |
8,077 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1450 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UF4SC120023B7SSB1200V/23MO,SICFET,G4,TO263-7 Qorvo |
8,156 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 1200 V | 72A (Tj) | 12V | 30mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UJ4SC075010L8SSB750V/10MO,SICFET,G4,TOLL Qorvo |
9,945 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 750 V | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UF3C120150K3SSICFET N-CH 1200V 18.4A TO247-3 Qorvo |
5,602 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 18.4A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
|
UF3SC065040D8SSICFET N-CH 650V 18A 4DFN Qorvo |
6,925 | - |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 18A (Tc) | 12V | 58mOhm @ 20A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |

