| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UJ4C075033L8SSR750V/33MO,SICFET,G4,TOLL Qorvo |
7,904 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tj) | 12V | 41mOhm @ 230A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ4C075060L8SSB750V/60MO,SICFET,G4,TOLL Qorvo |
2,260 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 27.8A (Tj) | 12V | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1420 pF @ 400 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ4C075023L8S750V/23MO,SICFET,G4,TOLL Qorvo |
7,659 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ3C120070K4S1200V/70MOHM, N-OFF SIC CASCODE, Qorvo |
5,277 | - |
|
数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34.5A (Tc) | 12V | 90mOhm @ 20A, 12V | 6V @ 10mA | 46 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 254.2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
UJ4C075023L8SSR750V/23MO,SICFET,G4,TOLL Qorvo |
6,778 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UJ4C075044L8SSB750V/44MO,SICFET,G4,TOLL Qorvo |
6,259 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 35.6A (Tj) | 12V | 56mOhm @ 25A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 181W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
UF4SC120030B7S1200V/30MO,SICFET,G4,TO263-7 Qorvo |
8,354 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1450 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UF4C120070B7SSB1200V/70MO,SICFET,G4,TO263-7 Qorvo |
5,594 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 25.7A (Tj) | 12V | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UF4SC120030B7SSR1200V/30MO,SICFET,G4,TO263-7 Qorvo |
3,896 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1450 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
UJ4C075033L8SSB750V/33MO,SICFET,G4,TOLL Qorvo |
7,114 | - |
|
数据手册 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 44A (Tj) | 12V | 41mOhm @ 230A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |

