电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPDD60R050G7XTMA1MOSFET N-CH 600V 47A HDSOP-10 Infineon Technologies |
3,215 | - |
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数据手册 |
CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2670 pF @ 400 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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IMZA65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
150 | - |
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数据手册 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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AUIRFP4568-EMOSFET N-CH 150V 171A TO247AD Infineon Technologies |
355 | - |
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数据手册 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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IPW60R075CPFKSA1MOSFET N-CH 650V 39A TO247-3 Infineon Technologies |
237 | - |
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数据手册 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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AUIRFP4568MOSFET N-CH 150V 171A TO247AC Infineon Technologies |
386 | - |
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数据手册 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPZA60R037P7XKSA1MOSFET N-CH 600V 76A TO247-4 Infineon Technologies |
194 | - |
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数据手册 |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IPDQ60R022S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
738 | - |
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数据手册 |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5639 pF @ 300 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
144 | - |
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数据手册 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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IPZA65R018CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
238 | - |
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数据手册 |
CoolMOS™ CFD7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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AIMW120R060M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 Infineon Technologies |
220 | - |
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数据手册 |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
