电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPB60R099C7ATMA1MOSFET N-CH 600V 22A TO263-3 Infineon Technologies |
1,000 | - |
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数据手册 |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPL60R085P7AUMA1MOSFET N-CH 600V 39A 4VSON Infineon Technologies |
238 | - |
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数据手册 |
CoolMOS™ P7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 85mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 154W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPL60R104C7AUMA1MOSFET N-CH 600V 20A 4VSON Infineon Technologies |
8,897 | - |
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数据手册 |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 104mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 122W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPTG063N15NM5ATMA1TRENCH >=100V Infineon Technologies |
1,774 | - |
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数据手册 |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.2A (Ta), 122A (Tc) | 8V, 10V | 6.3mOhm @ 50A, 10V | 4.6V @ 163µA | 63 nC @ 10 V | ±20V | 4800 pF @ 75 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8 |
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AUIRFP4110MOSFET N-CH 100V 120A TO247AC Infineon Technologies |
340 | - |
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数据手册 |
HEXFET® | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPW60R125C6FKSA1MOSFET N-CH 600V 30A TO247-3 Infineon Technologies |
272 | - |
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数据手册 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPB65R099CFD7AATMA1MOSFET N-CH 650V 24A TO263-3 Infineon Technologies |
884 | - |
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数据手册 |
CoolMOS™ CFD7A | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPL65R095CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
2,970 | - |
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数据手册 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 95mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPTC063N15NM5ATMA1OPTIMOS 5 POWER MOSFET Infineon Technologies |
1,800 | - |
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数据手册 |
OptiMOS™ 5 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.2A (Ta), 122A (Tc) | 8V, 10V | 6.3mOhm @ 50A, 10V | 4.6V @ 163µA | 63 nC @ 10 V | ±20V | 4800 pF @ 75 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
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IPP60R070CFD7XKSA1MOSFET N-CH 650V 31A TO220-3 Infineon Technologies |
700 | - |
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数据手册 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
