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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFSL4310ZPBFMOSFET N-CH 100V 120A TO262 Infineon Technologies |
4,474 | - |
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数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFU1018EPBFMOSFET N-CH 60V 56A IPAK Infineon Technologies |
8,948 | - |
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数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69 nC @ 10 V | ±20V | 2290 pF @ 50 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFU2307ZPBFMOSFET N-CH 75V 42A IPAK Infineon Technologies |
5,317 | - |
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数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75 nC @ 10 V | ±20V | 2190 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFU2607ZPBFMOSFET N-CH 75V 42A IPAK Infineon Technologies |
5,740 | - |
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数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51 nC @ 10 V | ±20V | 1440 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFU3806PBFMOSFET N-CH 60V 43A IPAK Infineon Technologies |
2,752 | - |
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数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRLU3114ZPBFMOSFET N-CH 40V 42A I-PAK Infineon Technologies |
2,538 | - |
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数据手册 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRLU8721-701PBFMOSFET N-CH 30V 65A I-PAK Infineon Technologies |
2,435 | - |
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数据手册 |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13 nC @ 4.5 V | ±20V | 1030 pF @ 15 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | I-PAK (LF701) |
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64-2096PBFMOSFET N-CH 75V 160A D2PAK Infineon Technologies |
8,053 | - |
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数据手册 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 160A (Tc) | 10V | 3.8mOhm @ 110A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7580 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRF7416QTRPBFMOSFET P-CH 30V 10A 8-SOIC Infineon Technologies |
3,256 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | - | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92 nC @ 10 V | - | 1700 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-SO |
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IRF2903ZSTRLPMOSFET N-CH 30V 75A D2PAK Infineon Technologies |
6,121 | - |
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数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240 nC @ 10 V | ±20V | 6320 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
