电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLR3303TRRPBFMOSFET N-CH 30V 35A DPAK Infineon Technologies |
3,051 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 31mOhm @ 21A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR540ZTRRPBFMOSFET N-CH 100V 35A DPAK Infineon Technologies |
3,520 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR18N15DTRLPMOSFET N-CH 150V 18A DPAK Infineon Technologies |
6,449 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | - | 900 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR18N15DTRRPMOSFET N-CH 150V 18A DPAK Infineon Technologies |
3,687 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR13N20DTRLPMOSFET N-CH 200V 13A DPAK Infineon Technologies |
5,087 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR13N20DTRRPMOSFET N-CH 200V 13A DPAK Infineon Technologies |
4,373 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR3504ZTRRPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
4,605 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRLR3717TRRPBFMOSFET N-CH 20V 120A DPAK Infineon Technologies |
7,905 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31 nC @ 4.5 V | ±20V | 2830 pF @ 10 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRLR8113TRLPBFMOSFET N-CH 30V 94A DPAK Infineon Technologies |
7,713 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 94A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.25V @ 250µA | 32 nC @ 4.5 V | ±20V | 2920 pF @ 15 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRFR12N25DTRLPMOSFET N-CH 250V 14A DPAK Infineon Technologies |
4,851 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
