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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD05N03LB GMOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
4,336 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4.8mOhm @ 60A, 10V | 2V @ 40µA | 25 nC @ 5 V | ±20V | 3200 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD09N03LB GMOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
3,937 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 9.1mOhm @ 50A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1600 pF @ 15 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD10N03LAMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
4,679 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD10N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
9,585 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD20N03LMOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
7,887 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2V @ 25µA | 11 nC @ 5 V | ±20V | 700 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD20N03L GMOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
8,681 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2V @ 25µA | 19 nC @ 5 V | ±20V | 695 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD230N06NGBTMA1MOSFET N-CH 60V 30A TO252-3 Infineon Technologies |
9,743 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 23mOhm @ 30A, 10V | 4V @ 50µA | 31 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD800N06NGBTMA1MOSFET N-CH 60V 16A TO252-3 Infineon Technologies |
4,675 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 10V | 80mOhm @ 16A, 10V | 4V @ 16µA | 10 nC @ 10 V | ±20V | 370 pF @ 30 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPI06N03LAMOSFET N-CH 25V 50A TO262-3 Infineon Technologies |
8,144 | - |
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数据手册 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI09N03LAMOSFET N-CH 25V 50A TO262-3 Infineon Technologies |
8,696 | - |
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数据手册 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
