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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BTS282ZAKSA1MOSFET N-CH 49V 80A TO220-7 Infineon Technologies |
2,337 | - |
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数据手册 |
TEMPFET® | TO-220-7 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | P-TO220-7-3 |
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BUZ31L E3044AMOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies |
2,407 | - |
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数据手册 |
SIPMOS® | TO-220-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | 2V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BUZ32H3045AATMA1MOSFET N-CH 200V 9.5A TO263-3 Infineon Technologies |
3,024 | - |
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数据手册 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB03N03LAMOSFET N-CH 25V 80A TO263-3 Infineon Technologies |
5,901 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 55A, 10V | 2V @ 100µA | 57 nC @ 5 V | ±20V | 7027 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB03N03LBMOSFET N-CH 30V 80A D2PAK Infineon Technologies |
2,433 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB04N03LBMOSFET N-CH 30V 80A D2PAK Infineon Technologies |
8,463 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.5mOhm @ 55A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5203 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB06N03LA GMOSFET N-CH 25V 50A TO263-3 Infineon Technologies |
9,018 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB06N03LB GMOSFET N-CH 30V 50A D2PAK Infineon Technologies |
9,700 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.3mOhm @ 50A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2782 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB070N06N GMOSFET N-CHAN D2PAK Infineon Technologies |
3,447 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 6.7mOhm @ 80A, 10V | 4V @ 180µA | 126 nC @ 10 V | - | 4300 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3 |
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IPB091N06N GMOSFET N-CHAN D2PAK Infineon Technologies |
2,136 | - |
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数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 8.8mOhm @ 80A, 10V | 4V @ 130µA | 81 nC @ 10 V | - | 2800 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3 |
