电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA80R1K4CEXKSA2MOSFET N-CH 800V 3.9A TO220 Infineon Technologies |
484 | - |
|
数据手册 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPA082N10NF2SXKSA1TRENCH >=100V PG-TO220-3 Infineon Technologies |
1,490 | - |
|
数据手册 |
StrongIRFET™ 2 | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 46A (Tc) | 6V, 10V | 8.2mOhm @ 30A, 10V | 3.8V @ 46µA | 42 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
IPA80R750P7XKSA1MOSFET N-CHANNEL 800V 7A TO220 Infineon Technologies |
500 | - |
|
数据手册 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPB80N04S404ATMA1MOSFET N-CH 40V 80A TO263-3-2 Infineon Technologies |
1,989 | - |
|
数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.2mOhm @ 80A, 10V | 4V @ 35µA | 43 nC @ 10 V | ±20V | 3440 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPB80N04S4L04ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
661 | - |
|
数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4mOhm @ 80A, 10V | 2.2V @ 35µA | 60 nC @ 10 V | +20V, -16V | 4690 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPD90N04S402ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
2,397 | - |
|
数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.4mOhm @ 90A, 10V | 4V @ 95µA | 118 nC @ 10 V | ±20V | 9430 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
IPB19DP10NMATMA1TRENCH >=100V PG-TO263-3 Infineon Technologies |
1,815 | - |
|
数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.9A (Ta), 13.8A (Tc) | 10V | 185mOhm @ 12A, 10V | 4V @ 1.04mA | 45 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPB80N04S403ATMA1MOSFET N-CH 40V 80A TO263-3-2 Infineon Technologies |
906 | - |
|
数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 53µA | 66 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPD60R360CFD7ATMA1MOSFET N-CH 600V 7A TO252-3-313 Infineon Technologies |
1,375 | - |
|
数据手册 |
CoolMOS™ CFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 14 nC @ 10 V | ±20V | 679 pF @ 400 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
IPAN60R180P7SXKSA1MOSFET N-CH 600V 18A TO220-FP Infineon Technologies |
368 | - |
|
数据手册 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 26W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
