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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BSZ0503NSIATMA1MOSFET N-CH 30V 20A/40A TSDSON Infineon Technologies |
3,716 | - |
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数据手册 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IRFH7545TRPBFMOSFET N-CH 60V 85A PQFN Infineon Technologies |
3,440 | - |
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数据手册 |
StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 6V, 10V | 5.2mOhm @ 51A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 3890 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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IPD80R1K4CEATMA1MOSFET N-CH 800V 3.9A TO252-3 Infineon Technologies |
2,486 | - |
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数据手册 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPW60R160P6FKSA1MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies |
239 | - |
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数据手册 |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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BSC018NE2LSIATMA1MOSFET N-CH 25V 29A/100A TDSON Infineon Technologies |
9,768 | - |
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数据手册 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 36 nC @ 10 V | ±20V | 2500 pF @ 12 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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IPA50R280CEXKSA2MOSFET N-CH 500V 7.5A TO220 Infineon Technologies |
450 | - |
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数据手册 |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.5A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 30.4W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
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IPA65R400CEXKSA1MOSFET N-CH 650V TO220 Infineon Technologies |
192 | - |
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数据手册 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15.1A (Tc) | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPB45N06S4L08ATMA3MOSFET N-CH 60V 45A TO263-3 Infineon Technologies |
2,986 | - |
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数据手册 |
OptiMOS™ T2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 7.9mOhm @ 45A, 10V | 2.2V @ 35µA | 64 nC @ 10 V | ±16V | 4780 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPD90N06S405ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
3,395 | - |
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数据手册 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 5.1mOhm @ 90A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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BSZ017NE2LS5IATMA1MOSFET N-CH 25V 27A/40A TSDSON Infineon Technologies |
9,200 | - |
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数据手册 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2V @ 250µA | 30 nC @ 10 V | ±16V | 2000 pF @ 12 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
