| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD50P04P4L11ATMA1MOSFET P-CH 40V 50A TO252-3 Infineon Technologies |
2,220 | - |
|
数据手册 |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 50A, 10V | 2.2V @ 85µA | 59 nC @ 10 V | +5V, -16V | 3900 pF @ 25 V | - | 58W (Tc) | -55°C ~ 155°C (TJ) | Automotive | - | Surface Mount | PG-TO252-3-313 |
|
IRF3711ZMOSFET N-CH 20V 92A TO220AB Infineon Technologies |
2,875 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24 nC @ 4.5 V | ±20V | 2150 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPL65R165CFDAUMA2MOSFET N-CH 650V 21.3A 4VSON Infineon Technologies |
7,242 | - |
|
数据手册 |
CoolMOS™ CFD2 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.3A (Tc) | 10V | 165mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IRF6644TR1MOSFET N-CH 100V 10.3A DIRECTFET Infineon Technologies |
5,805 | - |
|
数据手册 |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
|
IRFP4227PBFXKMA1TRENCH >=200V Infineon Technologies |
4,686 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 25mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | ITO-220AB |
|
IPB049N06L3GATMA1MOSFET N-CH 60V 80A D2PAK Infineon Technologies |
6,049 | - |
|
数据手册 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 58µA | 50 nC @ 4.5 V | ±20V | 8400 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRFH7934TR2PBFMOSFET N-CH 30V 24A 5X6 PQFN Infineon Technologies |
2,179 | - |
|
数据手册 |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 76A (Tc) | - | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | - | 3100 pF @ 15 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRF7464MOSFET N-CH 200V 1.2A 8SO Infineon Technologies |
6,262 | - |
|
数据手册 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF7468MOSFET N-CH 40V 9.4A 8SO Infineon Technologies |
8,634 | - |
|
数据手册 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34 nC @ 4.5 V | ±12V | 2460 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF7807VD2MOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
6,387 | - |
|
数据手册 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |

