| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GS-065-008-6-L-TRGS-065-008-6-L-TR Infineon Technologies Canada Inc. |
4,618 | - |
|
数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 8.8A (Tc) | 6V | 235mOhm @ 2.2A, 6V | 2.6V @ 1.7mA | 1.6 nC @ 6 V | +7V, -10V | 54 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
IRL3102MOSFET N-CH 20V 61A TO220AB Infineon Technologies |
7,689 | - |
|
数据手册 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA (Min) | 58 nC @ 4.5 V | ±10V | 2500 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFHM830TR2PBFMOSFET N-CH 30V 21A PQFN Infineon Technologies |
5,986 | - |
|
数据手册 |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | - | 3.8mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | - | 2155 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
|
94-2989MOSFET N-CH 55V 64A D2PAK Infineon Technologies |
2,749 | - |
|
数据手册 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRLR8103TRMOSFET N-CH 30V 89A DPAK Infineon Technologies |
8,374 | - |
|
数据手册 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50 nC @ 5 V | ±20V | - | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF6618MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
5,730 | - |
|
数据手册 |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IRF6635MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
9,532 | - |
|
数据手册 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71 nC @ 4.5 V | ±20V | 5970 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IRF2907ZLPBFMOSFET N-CH 75V 160A TO262 Infineon Technologies |
4,467 | - |
|
数据手册 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF7457MOSFET N-CH 20V 15A 8SO Infineon Technologies |
8,538 | - |
|
数据手册 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42 nC @ 4.5 V | ±20V | 3100 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IPB085N06L GMOSFET N-CH 60V 80A TO-263 Infineon Technologies |
4,818 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 8.2mOhm @ 80A, 10V | 2V @ 125µA | 104 nC @ 10 V | - | 3500 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3-2 |

