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场效应晶体管（FETs）、MOSFETs
| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPTG210N25NM3FDATMA1TRENCH >=100V PG-HSOG-8 |
1,800 |
|
数据手册 |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.7A (Ta), 77A (Tc) | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
FQA24N60MOSFET N-CH 600V 23.5A TO3PN |
442 |
|
数据手册 |
QFET® | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.5A (Tc) | 10V | 240mOhm @ 11.8A, 10V | 5V @ 250µA | 145 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
IXFH20N100PMOSFET N-CH 1000V 20A TO247AD |
277 |
|
数据手册 |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 126 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
IPTG111N20NM3FDATMA1TRENCH >=100V PG-HSOG-8 |
1,726 |
|
数据手册 |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 10.8A (Ta), 108A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 100 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
|
IPP410N30NAKSA1MOSFET N-CH 300V 44A TO220-3 |
429 |
|
数据手册 |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 300 V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7180 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
STW28NM50NMOSFET N-CH 500V 21A TO247-3 |
510 |
|
数据手册 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1735 pF @ 25 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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|
IXTH3N150MOSFET N-CH 1500V 3A TO247 |
166 |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 3A (Tc) | 10V | 7.3Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
IPW65R080CFDFKSA2MOSFET N-CH 650V 43.3A TO247-3 |
244 |
|
数据手册 |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.8mA | 167 nC @ 10 V | ±20V | 5030 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
|
STW57N65M5MOSFET N-CH 650V 42A TO247 |
443 |
|
数据手册 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SIHH068N60E-T1-GE3MOSFET N-CH 600V 34A PPAK 8 X 8 |
217 |
|
数据手册 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 68mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2650 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IPBE65R050CFD7AATMA1MOSFET N-CH 650V 45A TO263-7 |
2,851 |
|
数据手册 |
CoolMOS™ CFD7A | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3-10 |
|
R6070JNZ4C13600V 70A TO-247, PRESTOMOS WITH |
550 |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 15V | 58mOhm @ 35A, 15V | 7V @ 3mA | 165 nC @ 15 V | ±30V | 6000 pF @ 100 V | - | 770W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
|
IXFQ22N60P3MOSFET N-CH 600V 22A TO3P |
107 |
|
数据手册 |
HiPerFET™, Polar3™ | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 360mOhm @ 11A, 10V | 5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
IPW60R099CPAFKSA1MOSFET N-CH 600V 31A TO247-3 |
163 |
|
数据手册 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
|
NTH4L075N065SC1SILICON CARBIDE (SIC) MOSFET - 5 |
419 |
|
数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
STW20N95DK5MOSFET N-CH 950V 18A TO247 |
518 |
|
数据手册 |
MDmesh™ DK5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 18A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 50.7 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
NTBG160N120SC1SICFET N-CH 1200V 19.5A D2PAK |
820 |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19.5A (Tc) | 20V | 224mOhm @ 12A, 20V | 4.3V @ 2.5mA | 33.8 nC @ 20 V | +25V, -15V | 678 pF @ 800 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
|
|
IXTH140P05TMOSFET P-CH 50V 140A TO247 |
219 |
|
数据手册 |
TrenchP™ | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±15V | 13500 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
IPB65R041CFD7ATMA1HIGH POWER_NEW |
377 |
|
数据手册 |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
NTB082N65S3FMOSFET N-CH 650V 40A D2PAK |
3,840 |
|
数据手册 |
SuperFET® III | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
