| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2100MOSFET 2N-CH 30V 10A DIE EPC |
230 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2108MOSFET 3N-CH 60V/100V 9BGA EPC |
764 |
|
数据手册 |
eGaN® | 9-VFBGA | Tape & Reel (TR) | Obsolete | GaNFET (Gallium Nitride) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | - | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 9-BGA (1.35x1.35) |
|
EPC2110ENGRTMOSFET 2N-CH 120V 3.4A DIE EPC |
4,895 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Obsolete | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | - | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2100ENGRTMOSFET 2N-CH 30V 10A DIE EPC |
6,740 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Obsolete | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2106ENGRTMOSFET 2N-CH 100V 1.7A DIE EPC |
4,646 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2103ENGRTMOSFET 2N-CH 80V 23A DIE EPC |
9,834 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | - | - | Surface Mount | Die |
|
EPC2104ENGRTMOSFET 2N-CH 100V 23A DIE EPC |
2,576 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2105ENGRTMOSFET 2N-CH 80V 9.5A DIE EPC |
9,109 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2101ENGRTMOSFET 2N-CH 60V 9.5A/38A DIE EPC |
9,308 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2102ENGRTMOSFET 2N-CH 60V 23A DIE EPC |
6,601 |
|
数据手册 |
eGaN® | Die | Tape & Reel (TR) | Discontinued at Digi-Key | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |