| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RF1S17N06LMOSFET Harris Corporation |
4,370 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RF1K49223MOSFET 2P-CH 30V 2.5A 8SOIC Harris Corporation |
37,842 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | - | 30V | 2.5A | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC |
|
RF1S30N06LEMOSFET N-CH 60V 30A Harris Corporation |
1,848 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RF1S30P05MOSFET P-CH 50V 30A Harris Corporation |
1,040 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RF1S50N06SM9AS2551MOSFET 60V 50A Harris Corporation |
653 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RF1S630MOSFET N-CH 200V 9A Harris Corporation |
755 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RFIS70N06SMMOSFET N-CH 60V 70A Harris Corporation |
1,000 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RF1S40N10LEMOSFET N-CH 100V 40A Harris Corporation |
1,368 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RFIS40N10LEMOSFET N-CH 100V 40A Harris Corporation |
800 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RFIS30P06MOSFET P-CH 60V 30A Harris Corporation |
1,100 |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |