场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SMA5117

SMA5117

MOSFET 6N-CH 250V 7A 12SIP

Sanken Electric USA Inc.

4,438
SMA5117

数据手册

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 7A 250mOhm @ 3.5A, 10V 4V @ 1mA - 850pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
ALD114804ASCL

ALD114804ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

7,166
ALD114804ASCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114904APAL

ALD114904APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

5,962
ALD114904APAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD114804PCL

ALD114804PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

6,312
ALD114804PCL

数据手册

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD114813PCL

ALD114813PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

3,675
ALD114813PCL

数据手册

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD310700PCL

ALD310700PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

5,440
ALD310700PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310702PCL

ALD310702PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

6,176
ALD310702PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD210800PCL

ALD210800PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

4,558
ALD210800PCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD212914PAL

ALD212914PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

2,264
ALD212914PAL

数据手册

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Through Hole 8-PDIP
ALD310700ASCL

ALD310700ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

3,644
ALD310700ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310702ASCL

ALD310702ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

9,432
ALD310702ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310704ASCL

ALD310704ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

2,227
ALD310704ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310708ASCL

ALD310708ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

4,838
ALD310708ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD210808ASCL

ALD210808ASCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

7,513
ALD210808ASCL

数据手册

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD212908ASAL

ALD212908ASAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

5,049
ALD212908ASAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
SLA5061

SLA5061

MOSFET 3N/3P-CH 60V 10A/6A 12SIP

Sanken Electric USA Inc.

8,705
SLA5061

数据手册

- 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A, 6A 140mOhm @ 5A, 4V - - 460pF @ 10V, 1200pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
ALD114835PCL

ALD114835PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

2,382
ALD114835PCL

数据手册

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD110908APAL

ALD110908APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,794
ALD110908APAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
SLA5075

SLA5075

MOSFET 6N-CH 500V 5A 15ZIP

Sanken Electric USA Inc.

5,827
SLA5075

数据手册

- 15-SIP Exposed Tab, Formed Leads Tube Not For New Designs MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
ALD210808APCL

ALD210808APCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

3,750
ALD210808APCL

数据手册

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
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