场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ALD1108ESCL

ALD1108ESCL

MOSFET 4N-CH 10V 16SOIC

Advanced Linear Devices Inc.

5,204
ALD1108ESCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Not For New Designs MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 25pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD110908SAL

ALD110908SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

6,783
ALD110908SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110914SAL

ALD110914SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

8,303
ALD110914SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
SLA5212

SLA5212

MOSFET 6N-CH 35V 8A 15ZIP

Sanken Electric USA Inc.

3,169
SLA5212

数据手册

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 35V 8A - - - - - - - - Through Hole 15-ZIP
FDMS3604AS

FDMS3604AS

MOSFET 2N-CH 30V 13A/23A POWER56

onsemi

4,937
FDMS3604AS

数据手册

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1695pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
ALD110808SCL

ALD110808SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

5,177
ALD110808SCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
SI7983DP-T1-E3

SI7983DP-T1-E3

MOSFET 2P-CH 20V 7.7A PPAK SO8

Vishay Siliconix

9,076
SI7983DP-T1-E3

数据手册

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 7.7A 17mOhm @ 12A, 4.5V 1V @ 600µA 74nC @ 4.5V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
ALD114935SAL

ALD114935SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

3,849
ALD114935SAL

数据手册

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
FDMS7700S

FDMS7700S

MOSFET 2N-CH 30V 12A/22A POWER56

onsemi

6,017
FDMS7700S

数据手册

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 22A 7.5mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1750pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
FDMD82100

FDMD82100

MOSFET 2N-CH 100V 7A 12POWER

onsemi

8,540
FDMD82100

数据手册

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 7A 19mOhm @ 7A, 10V 4V @ 250µA 17nC @ 10V 1070pF @ 50V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
WI62120

WI62120

MOSFET 650V 13A 14PQFN

Wise-Integration

6,650
WI62120

数据手册

WiseGan™ 14-PowerLDFN Tray Active GaNFET (Gallium Nitride) - - 650V 13A - 2.2V @ 10mA 2.75nC @ 6V 92.7pF @ 400V - -40°C ~ 150°C (TJ) - - Surface Mount 14-PQFN (6x8)
SIZF640DT-T1-GE3

SIZF640DT-T1-GE3

MOSFET 2N-CH 40V 41A PWRPAIR

Vishay Siliconix

5,632
SIZF640DT-T1-GE3

数据手册

TrenchFET® Gen IV 8-PowerDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 41A (Ta), 159A (Tc) 1.37mOhm @ 15A, 10V 2.4V @ 250µA 106nC @ 10V 5750pF @ 20V 4.2W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAIR® 6x5FS
SMA5135

SMA5135

MOSFET 3N/3P-CH 60V 6A 12SIP

Sanken Electric USA Inc.

6,207
SMA5135

数据手册

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3 Phase Inverter) - 60V 6A (Ta) 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V 2V @ 250µA - 320pF @ 10V, 790pF @ 10V 4W (Ta), 29W (Tc) 150°C - - Through Hole 12-SIP
ALD212902SAL

ALD212902SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

4,140
ALD212902SAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD212904SAL

ALD212904SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

8,080
ALD212904SAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD212908SAL

ALD212908SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

9,980
ALD212908SAL

数据手册

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110902PAL

ALD110902PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,660
ALD110902PAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110904PAL

ALD110904PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

6,363
ALD110904PAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD111933PAL

ALD111933PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

6,835
ALD111933PAL

数据手册

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD114804SCL

ALD114804SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

5,086
ALD114804SCL

数据手册

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
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