SI4451DY-T1-GE3

IC COMPARATOR 2 DIFF 8SOIC

The picture may be a schematic diagram. View specifications for product details.

Vishay Siliconix SI4451DY-T1-GE3

Part No: SI4451DY-T1-GE3

Manufacturer:Vishay Siliconix

Package: 8-SOIC (0.154", 3.90mm Width)

Description: MOSFET P-CH 12V 10A 8SO

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Specifications

Manufacturer: Vishay Siliconix

Series:TrenchFET®

Package/Case:8-SOIC (0.154", 3.90mm Width)

Packaging:Tape & Reel (TR)

Product Status:Obsolete

FET Type:P-Channel

Technology:MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):12 V

Current - Continuous Drain (Id) @ 25°C:10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V

Rds On (Max) @ Id, Vgs:8.25mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id:800mV @ 850µA

Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V

Vgs (Max):±8V

Input Capacitance (Ciss) (Max) @ Vds:-

FET Feature:-

Power Dissipation (Max):1.5W (Ta)

Operating Temperature:-55°C ~ 150°C (TJ)

Grade:-

Qualification:-

Mounting Type:Surface Mount

Supplier Device Package:8-SOIC

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