APTM100DA18CT1G

IC COMPARATOR 2 DIFF 8SOIC

The picture may be a schematic diagram. View specifications for product details.

Microsemi Corporation APTM100DA18CT1G

Part No: APTM100DA18CT1G

Manufacturer:Microsemi Corporation

Package: SP1

Description: MOSFET N-CH 1000V 40A SP1

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Specifications

Manufacturer: Microsemi Corporation

Series:POWER MOS 8™

Package/Case:SP1

Packaging:Bulk

Product Status:Obsolete

FET Type:N-Channel

Technology:MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):1000 V

Current - Continuous Drain (Id) @ 25°C:40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):10V

Rds On (Max) @ Id, Vgs:216mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:570 nC @ 10 V

Vgs (Max):±30V

Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V

FET Feature:-

Power Dissipation (Max):657W (Tc)

Operating Temperature:-40°C ~ 150°C (TJ)

Grade:-

Qualification:-

Mounting Type:Chassis Mount

Supplier Device Package:SP1

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