| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
US1MUltra Fast DIODE 1A 1000V SMA Bruckewell |
81,700 |
|
数据手册 |
SMA | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | - | - | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
|
CBR06P65HLSIC SCHOTTKY DIODE,650V,6A,DFN 8 Bruckewell |
1,322 |
|
数据手册 |
- | 4-PowerTSFN | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 18A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | - | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 150°C |
|
CBR08P65DSIC SCHOTTKY DIODE,650V,8A,TO-25 Bruckewell |
1,850 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | Automotive | AEC-Q101 | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
CBR10P65HLSIC SCHOTTKY DIODE,650V,10A,DFN8 Bruckewell |
2,124 |
|
数据手册 |
- | 4-PowerTSFN | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 150°C |
|
CBR10P65SIC SCHOTTKY DIODE,650V,10A,TO-2 Bruckewell |
3,778 |
|
数据手册 |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | - | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |