| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
40SQ04540A AXIAL LEADED SCHOTTKY DIODES ANBON SEMICONDUCTOR (INT'L) LIMITED |
2,768 |
|
数据手册 |
- | Axial | Tape & Reel (TR) | Active | Schottky | 45 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | - | - | Through Hole | Axial | -55°C ~ 200°C |
|
AS3D020065A650V,20A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
137 |
|
数据手册 |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 56A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1190pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
ASZD020120C1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,981 |
|
数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AS4D040120P21200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,190 |
|
数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AS3D030065C650V,30A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,005 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1805pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |