| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXPSC04650QDIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors |
5,389 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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|
NXPSC06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
7,517 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC08650QDIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors |
3,421 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC04650DJDIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors |
4,190 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPSC08650BJDIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors |
3,736 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
NXPSC08650DJDIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors |
4,110 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPLQSC106506QDIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors |
4,503 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC201200CWQDIODE SIL CARB 1.2KV 20A TO247-3 WeEn Semiconductors |
4,087 |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
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WNSC401200CWQDIODE SIL CARB 1.2KV 40A TO247-3 WeEn Semiconductors |
5,908 |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 810pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
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WNSC101200QDIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors |
7,277 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |