| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF2003G C0GDIODE GEN PURP 150V 20A TO220AB Taiwan Semiconductor Corporation |
7,560 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 150 V | 20A | 975 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 80pF @ 4V, 1MHz | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2003PTHC0GDIODE GEN PURP 150V 20A TO247AD Taiwan Semiconductor Corporation |
6,287 |
|
数据手册 |
- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 150 V | 20A | 1.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 175pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
SF2004GHC0GDIODE GEN PURP 200V 20A TO220AB Taiwan Semiconductor Corporation |
6,754 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 200 V | 20A | 975 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2005GHC0GDIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation |
4,909 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 300 V | 20A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2006GHC0GDIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation |
2,284 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 400 V | 20A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2007G C0GDIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation |
2,695 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 500 V | 20A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 80pF @ 4V, 1MHz | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2007GHC0GDIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation |
4,622 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 500 V | 20A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF2007PTHC0GDIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation |
5,027 |
|
数据手册 |
- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 500 V | 20A | 1.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 500 V | 175pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
SF2008GDIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation |
9,269 |
|
数据手册 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 20A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 80pF @ 4V, 1MHz | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF3001PT C0GDIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation |
5,266 |
|
数据手册 |
- | TO-247-3 | Tube | Active | Standard | 50 V | 30A | 950 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |