| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HT14G A1GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
7,387 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 300 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 15pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
HT15G A1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
4,701 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
HT16G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
7,344 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
HT17G A1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
4,618 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
HT18G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
7,060 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT11G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,446 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT11GHA1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,051 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT12G A1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
5,916 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT12GHA1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
5,427 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT13G A1GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
7,389 |
|
数据手册 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |