| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFA1008GDIODE GEN PURP 600V 10A TO220AC Taiwan Semiconductor Corporation |
950 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |
|
SFAS808GDIODE GEN PURP 600V 8A TO263AB Taiwan Semiconductor Corporation |
2,347 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
SFAS808GHDIODE GEN PURP 600V 8A TO263AB Taiwan Semiconductor Corporation |
1,600 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
SFAS1008GH35NS, 10A, 600V, SUPER FAST RECO Taiwan Semiconductor Corporation |
1,600 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
SFAS1008G35NS, 10A, 600V, SUPER FAST RECO Taiwan Semiconductor Corporation |
1,600 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
SF2005GDIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation |
1,000 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 300 V | 20A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 80pF @ 4V, 1MHz | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SFF504GDIODE GEN PURP 200V 5A ITO220AB Taiwan Semiconductor Corporation |
1,000 |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 200 V | 5A | 980 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 70pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AB | -55°C ~ 150°C |
|
SFAF2004GDIODE GEN PURP 200V 20A ITO220AC Taiwan Semiconductor Corporation |
998 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 200 V | 20A | 975 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 170pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
SF1005GDIODE GEN PURP 300V 10A TO220AB Taiwan Semiconductor Corporation |
1,000 |
|
数据手册 |
- | TO-220-3 | Tube | Active | Standard | 300 V | 10A | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 300 V | 50pF @ 4V, 1MHz | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SFF2008GDIODE GEN PURP 600V 20A ITO220AB Taiwan Semiconductor Corporation |
988 |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 20A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 90pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AB | -55°C ~ 150°C |