| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IV1D06006O2DIODE SIL CARB 650V 17.4A TO220 Inventchip |
132 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D06006P3DIODE SIC 650V 16.7A TO252-3 Inventchip |
2,481 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
|
IV1D12005O2DIODE SIL CARB 1.2KV 17A TO220-2 Inventchip |
164 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D12010O2DIODE SIL CARB 1.2KV 28A TO220-2 Inventchip |
190 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
IV1D12010T2DIODE SIL CARB 1.2KV 30A TO247-2 Inventchip |
107 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12015T2DIODE SIL CARB 1.2KV 44A TO247-2 Inventchip |
120 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 44A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 888pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
IV1D12020T2DIODE SIL CARB 1.2KV 54A TO247-2 Inventchip |
110 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1114pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |