| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV430J-600PQDIODE ARRAY GP 600V 30A TO-3P WeEn Semiconductors |
3,784 |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Active | 1 Pair Common Cathode | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 175°C (Max) | - | - | Through Hole | TO-3P |
|
BYV415K-600PQDIODE ARRAY GP 600V 15A TO-3P WeEn Semiconductors |
898 |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Active | 1 Pair Common Cathode | Standard | 600 V | 15A | 2.1 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 10 µA @ 600 V | -65°C ~ 175°C | - | - | Through Hole | TO-3P |
|
BYV430W-600PQDIODE ARRAY GP 600V 60A TO247-3 WeEn Semiconductors |
2,027 |
|
数据手册 |
- | TO-247-3 | Tube | Active | 1 Pair Common Cathode | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 175°C (Max) | - | - | Through Hole | TO-247-3 |
|
BYV34G-600,127DIODE ARRAY GP 600V 20A I2PAK WeEn Semiconductors |
5,995 |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | 1 Pair Common Cathode | Standard | 600 V | 20A | 1.48 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 50 µA @ 600 V | 150°C (Max) | - | - | Through Hole | I2PAK |
|
WNSC2D16650CJQDIODE ARRAY SIC 650V 16A TO-3PF WeEn Semiconductors |
449 |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 175°C | - | - | Through Hole | TO-3PF |
|
WNSC2D20650CWQDIODE ARRAY SIC 650V 20A TO247-3 WeEn Semiconductors |
475 |
|
数据手册 |
- | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 175°C | - | - | Through Hole | TO-247-3 |
|
|
WNSC6D20650CW6QDIODE ARRAY SIC 650V 20A TO247-3 WeEn Semiconductors |
451 |
|
数据手册 |
- | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 175°C | - | - | Through Hole | TO-247-3 |
|
|
WNSC2D30650CWQDIODE ARRAY SIC 650V 30A TO247-3 WeEn Semiconductors |
2,218 |
|
数据手册 |
- | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 175°C | - | - | Through Hole | TO-247-3 |
|
NXPSC20650W6QDIODE ARRAY SIC 650V 20A TO247-3 WeEn Semiconductors |
707 |
|
数据手册 |
- | TO-247-3 | Bulk | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 175°C (Max) | - | - | Through Hole | TO-247-3 |
|
BYV32E-150,127DIODE ARRAY GP 150V 20A TO-220AB WeEn Semiconductors |
4,875 |
|
数据手册 |
- | TO-220-3 | Tube | Active | 1 Pair Common Cathode | Standard | 150 V | 20A | 1.15 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 30 µA @ 150 V | 150°C (Max) | - | - | Through Hole | TO-220AB |