| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR600200CTDIODE MOD SCHOT 200V 300A 2TOWER GeneSiC Semiconductor |
6,168 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 200 V | 300A | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MBR600200CTRDIODE MOD SCHOT 200V 300A 2TOWER GeneSiC Semiconductor |
8,008 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 200 V | 300A | 920 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MURT40040DIODE MODULE GP 400V 200A 3TOWER GeneSiC Semiconductor |
6,444 |
|
数据手册 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 200A | 1.35 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MUR40010CTDIODE MODULE GP 100V 200A 2TOWER GeneSiC Semiconductor |
7,698 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | - | - | - | Chassis Mount | Twin Tower |
|
MUR40010CTRDIODE MODULE GP 100V 200A 2TOWER GeneSiC Semiconductor |
9,157 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40020CTDIODE MODULE GP 200V 200A 2TOWER GeneSiC Semiconductor |
4,692 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40020CTRDIODE MODULE GP 200V 200A 2TOWER GeneSiC Semiconductor |
9,990 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40040CTDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
9,872 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40040CTRDIODE MODULE GP 400V 200A 2TOWER GeneSiC Semiconductor |
9,392 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40060CTDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
7,346 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |