| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR200200CTDIODE MOD SCHOT 200V 100A 2TOWER GeneSiC Semiconductor |
9,346 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 200 V | 100A | 920 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MBR200200CTRDIODE MOD SCHOT 200V 100A 2TOWER GeneSiC Semiconductor |
3,793 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 200 V | 100A | 920 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40005CTDIODE MODULE GP 50V 200A 2TOWER GeneSiC Semiconductor |
8,974 |
|
数据手册 |
- | Twin Tower | Bulk | Obsolete | 1 Pair Common Cathode | Standard | 50 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MUR40005CTRDIODE MODULE GP 50V 200A 2TOWER GeneSiC Semiconductor |
5,106 |
|
数据手册 |
- | Twin Tower | Bulk | Obsolete | 1 Pair Common Anode | Standard | 50 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MURT10040DIODE MODULE GP 400V 50A 3TOWER GeneSiC Semiconductor |
4,610 |
|
数据手册 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 50A | 1.35 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MURT10040RDIODE MODULE GP 400V 50A 3TOWER GeneSiC Semiconductor |
5,733 |
|
数据手册 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 400 V | 50A | 1.35 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MURT10060DIODE MODULE GP 600V 50A 3TOWER GeneSiC Semiconductor |
4,834 |
|
数据手册 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 50A | 1.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MURT10060RDIODE MODULE GP 600V 50A 3TOWER GeneSiC Semiconductor |
4,971 |
|
数据手册 |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard, Reverse Polarity | 600 V | 50A | 1.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MBR30035CTDIODE MOD SCHOTT 35V 150A 2TOWER GeneSiC Semiconductor |
8,856 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 35 V | 150A | 650 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
|
MBR30035CTRDIODE MOD SCHOTT 35V 150A 2TOWER GeneSiC Semiconductor |
9,220 |
|
数据手册 |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Schottky, Reverse Polarity | 35 V | 150A | 700 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 35 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |